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Resistivity of silicon in ohms cm. is approx. e

.5*1010 b. 2.5*1013 c. 1000 d. 5*106

4. The number of free electrons/cubic cm of intrinsic silicon at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 10000 d. 5*106

5. The forbidden energy gap for silicon is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

6. The forbidden energy gap for Germanium is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

7. N type material is formed by the addition of the following (penta valent )atom in n to semiconductor material

a. Antimony
For GATE Question Papers - CLICK HERE

1. Resistivity of silicon in ohms cm. is approx. equal to

a. 50 b. 1012 c. 230k d. 10-6

2. Rsistivity ofGermanium in ohms cm. is approx. equal to
a. 50 b. 10-12 c. 50k d. 10-6

3. The number of free electrons/cubic cm intrinsic Germanium at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 1000 d. 5*106

4. The number of free electrons/cubic cm of intrinsic silicon at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 10000 d. 5*106

5. The forbidden energy gap for silicon is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

6. The forbidden energy gap for Germanium is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

7. N type material is formed by the addition of the following (penta valent )atom in n to semiconductor material
a. Antimony
b. Arsenic
c. Phosphorous

For GATE Question Papers - CLICK HERE

1. Resistivity of silicon in ohms cm. is approx. equal to

a. 50 b. 1012 c. 230k d. 10-6

2. Rsistivity ofGermanium in ohms cm. is approx. equal to
a. 50 b. 10-12 c. 50k d. 10-6

3. The number of free electrons/cubic cm intrinsic Germanium at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 1000 d. 5*106

4. The number of free electrons/cubic cm of intrinsic silicon at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 10000 d. 5*106

5. The forbidden energy gap for silicon is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

6. The forbidden energy gap for Germanium is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

7. N type material is formed by the addition of the following (penta valent )atom in n to semiconductor material
a. Antimony
b. Arsenic
c. Phosphorous